IRF620
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 5.2A Tc 52A 50W 13ns
PDF
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Inventory: 1242
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 6A
Number of Elements 1
Number of Channels 1
Voltage 200V
Power Dissipation-Max 50W Tc
Element Configuration Single
Current 52A
Power Dissipation 50W
Turn On Delay Time 7.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 260pF
Drain to Source Resistance 800mOhm
Rds On Max 800 mΩ
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
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