IRF520
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 9.2A Tc 9.2A 60W 20ns
PDF
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Buying Options
Total Price: USD $0.52
Unit Price: USD $0.52345
≥1 USD $0.52345
≥10 USD $0.43035
≥100 USD $0.4161
≥500 USD $0.4028
≥1000 USD $0.3895
Inventory: 115139
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 9.2A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Turn On Delay Time 8.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 360pF
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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