IRC840PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-5
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 8A 5-Pin(5+Tab) TO-220
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Buying Options
Total Price: USD $1.16
Unit Price: USD $1.1628
≥1 USD $1.1628
≥10 USD $0.95475
≥100 USD $0.92435
≥500 USD $0.8949
≥1000 USD $0.86545
Inventory: 1143
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5
Number of Pins 5
Weight 3.000003g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Number of Channels 1
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Pulsed Drain Current-Max (IDM) 32A
FET Feature Current Sensing
Dimensions
Height 9.02mm
Length 10.67mm
Width 4.83mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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