FET Feature Current Sensing
Avalanche Energy Rating (Eas) 210 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 400V
Drain-source On Resistance-Max 0.55Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 54 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 550m Ω @ 6A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 125W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ