IRC644PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-5
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 250V 14A 5-Pin(5+Tab) TO-220
PDF
/
Buying Options
Total Price: USD $5.53
Unit Price: USD $5.52995
≥1 USD $5.52995
≥10 USD $4.53815
≥100 USD $4.39565
≥500 USD $4.2541
≥1000 USD $4.11255
Inventory: 1100
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.83mm
Length 10.67mm
Height 9.02mm
Technical
FET Feature Current Sensing
Avalanche Energy Rating (Eas) 550 mJ
DS Breakdown Voltage-Min 250V
Pulsed Drain Current-Max (IDM) 56A
Drain-source On Resistance-Max 0.28Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 49 ns
Fall Time (Typ) 29 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Rise Time 37ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 280m Ω @ 8.4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 125W Tc
Number of Channels 1
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T5
Pin Count 5
Time@Peak Reflow Temperature-Max (s) 40
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 3.000003g
Package / Case TO-220-5
Mounting Type Through Hole
Mount Through Hole
Alternative Model
Recommended For You
IRC644PBF+price,IRC644PBF+datasheet,IRC644PBF+in stock,buy+IRC644PBF,finder+IRC644PBF,IRC644PBF+tutorials,IRC644PBF+download