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IRC640PBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-5
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 200V 18A 5-Pin(5+Tab) TO-220
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5
Weight 3.000003g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
JESD-30 Code R-PSFM-T5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Number of Channels 1
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 51ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 430 mJ
FET Feature Current Sensing

Dimensions

Height 9.02mm
Length 10.67mm
Width 4.83mm

Compliance

RoHS Status ROHS3 Compliant

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