Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 430 mJ
FET Feature Current Sensing