Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 90V
Continuous Drain Current (ID) 860mA
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Drain to Source Voltage (Vdss) 90V
Current - Continuous Drain (Id) @ 25°C 860mA Tc
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Vgs(th) (Max) @ Id 2V @ 1mA
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Element Configuration Single
Power Dissipation-Max 725mW Ta 6.25W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ
Drain to Source Resistance 4Ohm