TPH3208PD
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GANFET N-CH 650V 20A TO220
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Technical
Operating Temperature -55°C~150°C
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology GaNFET (Gallium Nitride)
Power Dissipation-Max 96W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 13A, 8V
Vgs(th) (Max) @ Id 2.6V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±18V
Alternative Model
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