TPH3206LDB
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Package 4-PowerDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
GANFET N-CH 650V 16A PQFN
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 4-PowerDFN
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology GaNFET (Gallium Nitride)
Power Dissipation-Max 81W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 480V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±18V
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