TP65H070LSG
RoHS
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Package 3-PowerDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
650 V 25 A GAN FET
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 400V
Vgs(th) (Max) @ Id 4.8V @ 700μA
Rds On (Max) @ Id, Vgs 85m Ω @ 16A, 10V
FET Type N-Channel
Power Dissipation-Max 96W Tc
Technology GaNFET (Cascode Gallium Nitride FET)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Active
Series TP65H070L
Operating Temperature -55°C~150°C TJ
Physical
Package / Case 3-PowerDFN
Mounting Type Surface Mount
Alternative Model
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