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TP65H035WSQA

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RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GANFET N-CH 650V 47A TO247-3
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Buying Options
Total Price: USD $18.75
Unit Price: USD $18.7528
≥1 USD $18.7528
≥10 USD $15.54329
≥100 USD $14.57185
≥500 USD $12.434664
Inventory: 555
Minimum: 1
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Technical Details

Technical

Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Current - Continuous Drain (Id) @ 25°C 47.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 41m Ω @ 32A, 10V
FET Type N-Channel
Power Dissipation-Max 187W Tc
Technology GaNFET (Cascode Gallium Nitride FET)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series Automotive, AEC-Q101
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Package / Case TO-247-3
Mounting Type Through Hole

Supply Chain

Factory Lead Time 12 Weeks

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