TPS1101DR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 15V 2.3A 8-Pin SOIC T/R
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 1200
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number TPS1101
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 791mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 791mW
Case Connection ISOLATED
Turn On Delay Time 6.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 11.25nC @ 10V
Rise Time 5.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 10V
Vgs (Max) +2V, -15V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 2V
Drain Current-Max (Abs) (ID) 0.62A
Drain to Source Breakdown Voltage 15V
Dimensions
Height 1.75mm
Length 4.9mm
Width 3.91mm
Thickness 1.58mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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