Drain to Source Breakdown Voltage 15V
Gate to Source Voltage (Vgs) 2V
Continuous Drain Current (ID) -2.3A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 10V
Gate Charge (Qg) (Max) @ Vgs 11.25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 6.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 791mW Ta
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ