Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 504mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.5 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.27A Ta
Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 10V
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.27A
Gate to Source Voltage (Vgs) 2V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 15V