TPS1100DG4
RoHS
/
Package SOIC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Single P-Ch Enh-Mode MOSFET
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Rds On Max 180 mΩ
Drain to Source Resistance 180mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 15V
Gate to Source Voltage (Vgs) 2V
Continuous Drain Current (ID) 1.6A
Turn-Off Delay Time 13 ns
Fall Time (Typ) 10 ns
Polarity/Channel Type P-CHANNEL
Drain to Source Voltage (Vdss) -15V
Rise Time 10ns
Transistor Application SWITCHING
Turn On Delay Time 4.5 ns
Power Dissipation 791mW
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 791mW
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 8
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Min Operating Temperature -40°C
Max Operating Temperature 125°C
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1
JESD-609 Code e4
Physical
Number of Pins 8
Package / Case SOIC
Mount Surface Mount
Alternative Model
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