DS Breakdown Voltage-Min 20V
Drain-source On Resistance-Max 0.125Ohm
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 1.33nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 385pF @ 10V
Vgs(th) (Max) @ Id 1.05V @ 250μA
Rds On (Max) @ Id, Vgs 76m Ω @ 400mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500mW Ta
Base Part Number CSD25501
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ