CSD25483F4T
RoHS 
RoHS compliant
RoHS compliantPackage 3-XFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V LGA
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Buying Options
Total Price: USD $0.8
Unit Price: USD $0.8008
≥1 USD $0.8008
≥10 USD $0.69608
≥100 USD $0.481976
Inventory: 1115
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD25483
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 205m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 198pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 0.96nC @ 4.5V
Rise Time 3.7 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 17.4 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage -950mV
Gate to Source Voltage (Vgs) -12V
DS Breakdown Voltage-Min 20V
Dimensions
Height 350μm
Length 1.035mm
Width 635μm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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