Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) -12V
Continuous Drain Current (ID) 1.6A
Turn-Off Delay Time 17.4 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 0.959nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 198pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 205m Ω @ 500mA, 8V
Turn On Delay Time 4.3 ns
Element Configuration Single
Power Dissipation-Max 500mW Ta
Base Part Number CSD25483
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ