DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 240A
Drain-source On Resistance-Max 0.0121Ohm
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 104A
Turn-Off Delay Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 104A Tc
Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 10V
Vgs(th) (Max) @ Id 1.15V @ 250μA
Rds On (Max) @ Id, Vgs 6.5m Ω @ 10A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.8W Ta 96W Tc
Base Part Number CSD25404
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ