CSD25402Q3AT
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
20V PCH MOSFET
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 298838
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code compliant
JESD-30 Code R-PDSO-F8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.9m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.15V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1790pF @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Ta 76A Tc
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 35A
Drain-source On Resistance-Max 0.0159Ohm
Pulsed Drain Current-Max (IDM) 148A
DS Breakdown Voltage-Min 20V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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