Drain to Source Breakdown Voltage -20V
Drain Current-Max (Abs) (ID) 60A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 13.5 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 14A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 11.7m Ω @ 10A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 8.1 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Base Part Number CSD25401
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ