CSD25310Q2T
RoHS 
RoHS compliant
RoHS compliantPackage 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
20-V P-CHANNEL NEXFET POWER MOSF
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Buying Options
Total Price: USD $0.7
Unit Price: USD $0.6952
≥1 USD $0.6952
≥10 USD $0.56672
≥100 USD $0.44088
Inventory: 1377
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Base Part Number CSD25310
JESD-30 Code S-PDSO-N6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.9W Ta
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23.9m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 9.6A
Drain-source On Resistance-Max 0.089Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 20V
Feedback Cap-Max (Crss) 21.7 pF
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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