DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 48A
Drain-source On Resistance-Max 0.089Ohm
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 10V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Rds On (Max) @ Id, Vgs 23.9m Ω @ 5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.9W Ta
Base Part Number CSD25310
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ