CSD25303W1015
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
NexFET? Tape & Reel (TR) Surface Mount P-Channel Mosfet Transistor 3A Tc 3A 1.5W 7.8ns
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Buying Options
Total Price: USD $2.92
Unit Price: USD $2.9241
≥1 USD $2.9241
≥10 USD $2.39875
≥100 USD $2.32465
≥500 USD $2.2496
≥1000 USD $2.17455
Inventory: 6567
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Base Part Number CSD25303
Pin Count 6
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 3.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4.5V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 7.8 ns
Turn-Off Delay Time 11.3 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.092Ohm
Drain to Source Breakdown Voltage -20V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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