Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) -6V
Continuous Drain Current (ID) 3.2A
Turn-Off Delay Time 36.9 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 10V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Rds On (Max) @ Id, Vgs 33m Ω @ 1.5A, 4.5V
Turn On Delay Time 13.6 ns
Element Configuration Single
Power Dissipation-Max 1W Ta
Base Part Number CSD25211
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ