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CSD23202W10T

Texas Instruments
RoHS
RoHS RoHS compliant
Package 4-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TEXAS INSTRUMENTS CSD23202W10TMOSFET Transistor, P Channel, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV
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Buying Options
Total Price: USD $0.62
Unit Price: USD $0.6248
≥1 USD $0.6248
≥10 USD $0.50776
≥100 USD $0.394944
Inventory: 1153
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Dimensions

Thickness 650μm
Width 0m
Length 0m
Height 625μm

Technical

Feedback Cap-Max (Crss) 37 pF
Drain to Source Breakdown Voltage -12V
Gate to Source Voltage (Vgs) -6V
Threshold Voltage -600mV
Continuous Drain Current (ID) 2.2A
Turn-Off Delay Time 58 ns
Fall Time (Typ) 21 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 12V
Rise Time 4ns
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 512pF @ 6V
Vgs(th) (Max) @ Id 900mV @ 250μA
Rds On (Max) @ Id, Vgs 53m Ω @ 500mA, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 9 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Number of Channels 1
Number of Elements 1
Base Part Number CSD23202
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series NexFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 4
Package / Case 4-UFBGA, DSBGA
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks

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