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CSD23202W10

Texas Instruments
RoHS
RoHS RoHS compliant
Package 4-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R
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Buying Options
Total Price: USD $0.43
Unit Price: USD $0.4312
≥1 USD $0.4312
≥10 USD $0.33264
≥100 USD $0.199496
≥500 USD $0.184694
≥1000 USD $0.125594
Inventory: 1674
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD23202
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 53m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 512pF @ 6V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Rise Time 4ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) -6V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage -12V
Feedback Cap-Max (Crss) 37 pF

Dimensions

Height 625μm
Length 0m
Width 0m
Thickness 650μm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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