Drain to Source Breakdown Voltage 12V
Gate to Source Voltage (Vgs) -6V
Continuous Drain Current (ID) 2.2A
Turn-Off Delay Time 68 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 6V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 82m Ω @ 500mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1W Ta
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Base Part Number CSD23201
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ