CSD19537Q3T
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 50A 8VSON
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Buying Options
Total Price: USD $1.36
Unit Price: USD $1.3552
≥1 USD $1.3552
≥10 USD $1.1088
≥100 USD $0.862312
Inventory: 1126
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Resistance 12.1mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Base Part Number CSD19537
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 3 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.7A
Pulsed Drain Current-Max (IDM) 219A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 55 mJ
Feedback Cap-Max (Crss) 17.3 pF
Dimensions
Length 3.3mm
Width 3.3mm
Thickness 1mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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