Avalanche Energy Rating (Eas) 806 mJ
Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 150A
Turn-Off Delay Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Current - Continuous Drain (Id) @ 25°C 150A Ta
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Rds On (Max) @ Id, Vgs 2.7m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 375W Tc
Base Part Number CSD19536
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ