Feedback Cap-Max (Crss) 7.4 pF
Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 55 mJ
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 44A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Ta
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 50V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Rds On (Max) @ Id, Vgs 15.1m Ω @ 10A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.2W Ta 63W Tc
Base Part Number CSD19534
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ