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CSD19534KCS

Texas Instruments
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 100A TO220
PDF
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Buying Options
Total Price: USD $1.35
Unit Price: USD $1.3464
≥1 USD $1.3464
≥10 USD $1.083456
≥100 USD $0.858616
≥500 USD $0.727742
≥1000 USD $0.59283
≥3000 USD $0.558078
Inventory: 403
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status Non-RoHS Compliant
REACH SVHC No SVHC

Dimensions

Thickness 4.58mm
Width 8.7mm
Length 10.16mm
Height 4.7mm

Technical

Feedback Cap-Max (Crss) 7.4 pF
Avalanche Energy Rating (Eas) 54 mJ
DS Breakdown Voltage-Min 100V
Drain-source On Resistance-Max 0.02Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 2.8V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 9 ns
Fall Time (Typ) 1 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 100V
Rise Time 2 ns
Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 50V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Rds On (Max) @ Id, Vgs 16.5m Ω @ 30A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 6 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 118W Tc
Number of Elements 1
Base Part Number CSD19534
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Alternative Model

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