Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 274 mJ
Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.0057Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 50V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Rds On (Max) @ Id, Vgs 4.9m Ω @ 17A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta 195W Tc
Base Part Number CSD19532
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ