Feedback Cap-Max (Crss) 22 pF
Avalanche Energy Rating (Eas) 274 mJ
Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 80V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 4870pF @ 40V
Vgs(th) (Max) @ Id 3.3V @ 250μA
Rds On (Max) @ Id, Vgs 4.1m Ω @ 19A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta 195W Tc
Base Part Number CSD19502
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ