Element Configuration Single
Rds On (Max) @ Id, Vgs 44m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5070pF @ 30V
Current - Continuous Drain (Id) @ 25°C 200A Ta
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 170A
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 281 mJ
Feedback Cap-Max (Crss) 14 pF
Power Dissipation-Max 200W Tc
Base Part Number CSD18542
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ