Drain Current-Max (Abs) (ID) 200A
Drain-source On Resistance-Max 0.0022Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 819 mJ
Feedback Cap-Max (Crss) 51 pF
Continuous Drain Current (ID) 349A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200A Ta 349A Tc
Input Capacitance (Ciss) (Max) @ Vds 11430pF @ 30V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 375W Tc
Base Part Number CSD18536
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 2 (1 Year)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ