Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18536
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11430pF @ 30V
Current - Continuous Drain (Id) @ 25°C 200A Ta
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0022Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 819 mJ
Feedback Cap-Max (Crss) 51 pF