Avalanche Energy Rating (Eas) 616 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 400A
Drain-source On Resistance-Max 0.0029Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200A
Turn-Off Delay Time 19 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200A Ta
Input Capacitance (Ciss) (Max) @ Vds 6620pF @ 30V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Base Part Number CSD18535
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ