Feedback Cap-Max (Crss) 6.5 pF
Max Junction Temperature (Tj) 175°C
Avalanche Energy Rating (Eas) 72 mJ
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 73A
Turn-Off Delay Time 10.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 30V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Rds On (Max) @ Id, Vgs 9.5m Ω @ 40A, 10V
Transistor Application SWITCHING
Turn On Delay Time 4.2 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 107W Tc
Base Part Number CSD18534
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ