CSD18532NQ5B
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 60V 22A 8-Pin VSON EP T/R
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Buying Options
Total Price: USD $2.15
Unit Price: USD $2.1472
≥1 USD $2.1472
≥10 USD $1.78464
≥100 USD $1.42032
≥500 USD $1.201798
≥1000 USD $1.019709
Inventory: 1173
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18532
Number of Elements 1
Power Dissipation-Max 3.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 8.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5340pF @ 30V
Current - Continuous Drain (Id) @ 25°C 22A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 8.7 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 360 mJ
Dimensions
Length 5mm
Width 6mm
Thickness 950μm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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