Max Junction Temperature (Tj) 175°C
Avalanche Energy Rating (Eas) 224 mJ
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 3840pF @ 30V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Rds On (Max) @ Id, Vgs 4.6m Ω @ 22A, 10V
Transistor Application SWITCHING
Turn On Delay Time 4.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta 156W Tc
Base Part Number CSD18531
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ