CSD18514Q5A
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
40V N CH MOSFET
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Buying Options
Total Price: USD $0.8
Unit Price: USD $0.802515
≥1 USD $0.802515
≥10 USD $0.757083
≥100 USD $0.714233
≥500 USD $0.673809
≥1000 USD $0.635672
Inventory: 1156
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18514
Number of Elements 1
Power Dissipation-Max 74W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 89A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0079Ohm
Pulsed Drain Current-Max (IDM) 237A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 55 mJ
Dimensions
Length 4.9mm
Width 6mm
Thickness 1mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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