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CSD18513Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 40V N-Channel NexFET? Power MOSFET 8-VSONP -55 to 150
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Buying Options
Total Price: USD $0.99
Unit Price: USD $0.9856
≥1 USD $0.9856
≥10 USD $0.80432
≥100 USD $0.62524
≥500 USD $0.529989
≥1000 USD $0.431737
Inventory: 1156
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18513
Number of Elements 1
Power Dissipation-Max 96W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4280pF @ 20V
Current - Continuous Drain (Id) @ 25°C 124A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0053Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 106 mJ
Feedback Cap-Max (Crss) 231 pF

Dimensions

Length 4.9mm
Width 6mm
Thickness 1mm

Compliance

RoHS Status ROHS3 Compliant

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