Feedback Cap-Max (Crss) 354 pF
Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 345 mJ
Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 38A
Turn-Off Delay Time 57 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 13900pF @ 20V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 1.2m Ω @ 32A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.1W Ta 195W Tc
Base Part Number CSD18509
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ