Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18504
Power Dissipation-Max 3.1W Ta 77W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.2 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1656pF @ 20V
Current - Continuous Drain (Id) @ 25°C 15A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 275A
Avalanche Energy Rating (Eas) 92 mJ
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 9.6 pF