CSD17579Q3AT
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 35A 8VSON
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Buying Options
Total Price: USD $0.78
Unit Price: USD $0.7832
≥1 USD $0.7832
≥10 USD $0.64064
≥100 USD $0.498608
Inventory: 1095
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17579
Number of Elements 1
Power Dissipation-Max 3.2W Ta 29W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.2m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 998pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.0142Ohm
Pulsed Drain Current-Max (IDM) 106A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 14 mJ
Feedback Cap-Max (Crss) 49 pF
Dimensions
Length 3.3mm
Width 3.3mm
Thickness 800μm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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