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CSD17577Q3AT

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 30V 19A 8-Pin VSONP EP T/R
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Buying Options
Total Price: USD $1.21
Unit Price: USD $1.2144
≥1 USD $1.2144
≥10 USD $0.99352
≥100 USD $0.772728
Inventory: 1117
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17577
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.8W Ta 53W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Ta
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 31 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 19A
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 239A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 39 mJ

Dimensions

Length 3.3mm
Width 3.3mm
Thickness 800μm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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