Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 39 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 239A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Ta
Input Capacitance (Ciss) (Max) @ Vds 2310pF @ 15V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Rds On (Max) @ Id, Vgs 4.8m Ω @ 16A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.8W Ta 53W Tc
Base Part Number CSD17577
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ