Avalanche Energy Rating (Eas) 7.2 mJ
Pulsed Drain Current-Max (IDM) 39A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.029Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 22A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 22A Ta
Input Capacitance (Ciss) (Max) @ Vds 468pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 29m Ω @ 5A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 5.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Base Part Number CSD17571
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ