Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 40A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 15V
Vgs(th) (Max) @ Id 1.7V @ 250μA
Rds On (Max) @ Id, Vgs 1.15m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 3.2W Ta 96W Tc
Base Part Number CSD17559
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ